A61L-0001-0187#A意法半导体(STMicroelectronics,简称ST)的槽栅结构低压MOSFETs STripFET F7系列将新增60V的产品线,可协助电信、服务器和台式PC机的电源以及工业电源和太阳能微逆变器的直流-直流(DC/DC)电源转换器达到严格的能效标准要求,最大限度提升电源功率密度。
ST新闻稿9月16日-图片——意.jpg
STripFET F7 MOSFET不仅大幅提高了晶体管的导通能效和开关性能,A61L-0001-0187#A还简化了通道间的槽栅结构(trench-gate structure),实现极低的导通电阻、电容和栅电荷量,并取得优异的品质因数(RDS(ON) x Qg)。此外,本征体二极管的恢复电荷(recovery charge)很低,有助于提高开关性能。高雪崩耐量确保在恶劣条件下保持性能稳健,反向传输电容对输入电容(Crss/Ciss)的比值低,有助于强化抗电磁干扰(EMI immunity)。
A61L-0001-0187#A意法半导体的60V STripFET F7 MOSFET是为同步整流(synchronous rectification)电路定制,能够以更少的并联器件达到最大目标电流,以此提高功率密度、降低元器件使用数量。该系列共有12款产品,覆盖了所有工业标准电源,最大输出电流从90A到260A(在Tc=25°C下,硅限制连续漏极电流)。新产品提供多个封装选择,包括PowerFLAT? 5x6、PowerFLAT 3.3x3.3、DPAK、D2PAK、TO-220、TO-220FP、双引脚或六引脚H2PAK。
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RC CHINO INFRA-RED RADIATION THERMOMETER IR-CA,IR-CAB
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