| 产品参数 | |||
|---|---|---|---|
| VS320N10AU 100V/320A N通道 (MOSFET威兆一级代理) 品牌 | VS威兆 | ||
| 封装 | TO-247 | ||
| 批号 | 21 | ||
| 数量 | 89213 | ||
| Part | VS320N10AU | ||
| BVDSS[V] | 100 | ||
| Status | NEW | ||
| VGS Max[V] | 25 | ||
| Type | Single-N | ||
| VTH Typ[V] | 3.1 | ||
| ESD | TO-247 | ||
| RDS(ON) Max 10V | 3.1 | ||
| RDS(ON) Max 4.5V | 0.0 | ||
| ID(A)@25℃ | 320.0 | ||
| TUBE | 30PCS | ||
| Drain-Source breakdown voltage | 100V | ||
| Gate-Source voltage | ±25 | ||
| Marking | 320N10A | ||
| MOS | 100V/320A N-Channel Advanced Power MOSFET | ||
| Thermal Resistance | |||
| Junction-to-Case | 0.3 | ||
| 可售卖地 | 全国 | ||
| 型号 | VS320N10AU | ||
VS320N10AU 100V/320A N-Channel Advanced Power MOSFET ---VS320N10AU
VS320N10AU? VSP008N10MSC? ?VS1401AMH? VS3506AE? VS3610AI VS840ATH VS8401AMT等威兆一级代理 可售样 可提供技术支持欢迎来电咨询? ?量大价优? ?13418531057(胡蓝丹)??
VS320N10AU?替换IXFH320N10T2? 威兆正规代理商 可售样
Features ? Enhancement mode ? Very Low on-resistance RDS(on) ? Fast Switching and High efficiency ? 100 Avalanche test
VS320N10AU TO-247 320N10A 30pcs/Tube
Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ Tj=25°C (unless otherwise stated) V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 100 -- -- V IDSS Zero Gate Voltage Drain Current VDS=100V,VGS=0V -- -- 1 μA Zero Gate Voltage Drain Current(Tj =125℃) VDS=100V,VGS=0V -- -- 100 μA IGSS Gate-Body Leakage Current VGS=±25V,VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 2.6 3.1 3.6 V RDS(on) Drain-Source On-State Resistance ④ VGS=10V, ID=120A -- 2.6 3.1 mΩ Tj =100℃ -- 3.9 -- mΩ Dynamic Electrical Characteristics @ Tj = 25°C (unless otherwise stated) Ciss Input Capacitance VDS=30V,VGS=0V, f=1MHz
23480 31305 41635 pF Coss Output Capacitance 1000 1335 1775 pF Crss Reverse Transfer Capacitance 325 430 570 pF Rg Gate Resistance f=1MHz 0.2 0.7 5 Ω Qg Total Gate Charge VDS=50V,ID=80A, VGS=10V -- 452 600 nC Qgs Gate-Source Charge -- 131 174 nC Qgd Gate-Drain Charge -- 119 179 nC Switching Characteristics Td(on) Turn-on Delay Time VDD=50V, ID=80A, RG=3Ω, VGS=10V -- 77 -- ns Tr Turn-on Rise Time -- 142 -- ns Td(off) Turn-Off Delay Time -- 190 -- ns Tf Turn-Off Fall Time -- 137 -- ns Source- Drain Diode Characteristics@ Tj = 25°C (unless otherwise stated) VSD Forward on voltage ISD=120A,VGS=0V -- 0.9 1.2 V Trr Reverse Recovery Time Tj=25℃,Isd=80A, VGS=0V
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di/dt=100A/μs -- 63 -- ns Qrr Reverse Recovery Charge -- 144 -- nC NOTE: ① Repetitive rating; pulse b limited by max junction temperature. ② Limited by TJmax, starting TJ = 25°C, L =0.5mH, RG = 25Ω, IAS =50A, VGS =10V. Part not recommended for use above this value ③ The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. ④ Pulse b ≤ 380μs; duty cycle≤ 2
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