| 产品参数 | |||
|---|---|---|---|
| 品牌 | Vanguard | ||
| 封装 | PDFN3333 | ||
| 批号 | 23 | ||
| 数量 | 89321 | ||
| 数量 | 89321 | ||
| 种类 | MOSFET | ||
| MOS | NMOS | ||
| 耐压 | 30V | ||
| 内阻 | 20豪欧 | ||
| 电子 | 功率管 | ||
| 可售卖地 | 全国 | ||
| 型号 | VS3622AE | ||
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Features
? N-Channel，5V Logic Level Control
? Enhancement mode
? Low on-resistance RDS(on) @ VGS=4.5 V
? Fast Switching
? 100 Avalanche test
? Pb-free lead plating; RoHS compliant
特性
n通道，5V逻辑电平控制增强模式
低导通电阻RDS(on) @ VGS=4.5 V
快速切换
无铅镀铅;通过无铅认证
Features? N-Channel，5V Logic Level Control ? Enhancement mode? Low on-resistance RDS(on) @ VGS=4.5 V? Fast Switching? 100 Avalanche test ? Pb-free lead plating; RoHS compliant
Symbol Parameter Rating UnitV(BR)DSS Drain-Source breakdown voltage 30 VS I Diode continuous forward current TC =25°C45 AD I Continuous drain current @VGS=10V TC =25°C45 ATC =100°C28 ADM I Pulse drain current tested ① TC =25°C180 AEAS Avalanche energy, single pulsed ② 20 mJPD Maximum power dissipation TC =25°C28 WVGS Gate-Source voltage ±20 VTSTG ,TJ Storage and Junction Temperature Range -55 to 150 °CThermal Characteristics Symbol Parameter Typical UnitR?JC Thermal Resistance, Junction-to-Case 4.5 °C/WR?JA Thermal Resistance, Junction-to-Ambient 35 °C/W
Ciss Input Capacitance VDS=15V,VGS=0V, f=1MHz -- 860 -- pFCoss Output Capacitance -- 140 -- pFCrss Reverse Transfer Capacitance -- 105 -- pFRg Gate Resistance f=1MHz -- 2.7 -- ΩQg (10V) Total Gate Charge VDS=15V,ID=20A, VGS=10V -- 19 -- nCQg (4.5V) Total Gate Charge -- 13 -- nCQgs Gate-Source Charge -- 4.3 -- nCQgd Gate-Drain Charge -- 6.5 -- nCSwitching Characteristics d(on) t Turn-on Delay Time VDD=15V, ID=20A, RG=3.0Ω, VGS=10V -- 6-- nsr t Turn-on Rise Time -- 5-- nsd(off) t Turn-Off Delay Time -- 25-- nsf t Turn-Off Fall Time -- 7-- nsSource- Drain Diode Characteristics@ Tj = 25°C (unless otherwise stated) VSD Forward on voltage ISD=20A,VGS=0V -- 0.9 1.2 Vrr t Reverse Recovery Time Tj=25℃,Isd=20A, VGS=0V di/dt=500A/μs -- 7 -- nsQrr Reverse Recovery Charge -- 6.3 -- nC
