| 产品参数 | |||
|---|---|---|---|
| 品牌 | NCE新洁能 | ||
| 封装 | TO-252 | ||
| 批号 | 21 | ||
| 数量 | 89213 | ||
| RoHS | 是 | ||
| 产品种类 | 电子元器件 | ||
| 最小工作温度 | -50C | ||
| 最大工作温度 | 125C | ||
| 最小电源电压 | 5V | ||
| 最大电源电压 | 6V | ||
| 长度 | 6.2mm | ||
| 宽度 | 2.7mm | ||
| 高度 | 2.4mm | ||
| 可售卖地 | 全国 | ||
| 型号 | NCE0115K | ||
NCE N-Channel Enhancement Mode Power MOSFET ---NCE0115K
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NCE0115K? NCE2060K? NCE2302? NCE3010S? NCE30P12S? ?NCE3050K? NCE3080IA? NCE3095K
NCE3400? NCE3416? NCE4060K? NCE4080K? NCE6003? NCE6005AR? NCE6075K? NCE6080K? NCE65T180F
NCE65T360? NCE70T540F等新洁能NCE一级代理,全新原装现货,可售样,可提供技术支持
LED驱动IC及配套MOS: 13418531057 (微信同号)胡蓝丹
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Debion The NCE0115K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =100V,ID =15A RDS(ON) < 100m? @ VGS=10V (Typ:80m?) RDS(ON) < 110m? @ VGS=4.5V (Typ:85m?) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and unibity with high EAS ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits 100 UIS TESTED! 100 ?Vds TESTED!
Package Marking and Ordering Inbation Device Marking Device Device Package Reel Size Tape b Quantity NCE0115K NCE0115K TO-252-2L - - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 15 A Drain Current-Continuous(TC=100℃) ID (100℃) 10.6 A Pulsed Drain Current IDM 60 A Maximum Power Dissipation PD 50 W Single pulse avalanche energy (Note 5) EAS 200 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC 3 ℃/W
Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 100 110 - V Zero Gate Voltage Drain Current IDSS VDS=100V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1.0 1.6 2.5 V VGS=10V, ID=10A - 80 100 Drain-Source On-State Resistance RDS(ON) VGS=4.5V, ID=10A - 85 110 m? Forward Transconductance gFS VDS=5V,ID=10A - 10 - S Dynamic Characteristics (Note4) Input Capacitance Clss - 830 - PF Output Capacitance Coss - 44.2 - PF Reverse Transfer Capacitance Crss VDS=50V,VGS=0V, F=1.0MHz - 30.1 - PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) - 15 - nS Turn-on Rise Time tr - 5 - nS Turn-Off Delay Time td(off) - 25 - nS Turn-Off Fall Time tf VDD=50V, RL=6.4? VGS=10V,RG=3? - 7 - nS Total Gate Charge Qg - 22.3 nC Gate-Source Charge Qgs - 2.87 - nC Gate-Drain Charge Qgd VDS=50V,ID=10A, VGS=10V - 6.14 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=15A - - 1.2 V Diode Forward Current (Note 2) IS - - 15 A
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