Asymmetric Integrated Gate-Commutated Thyristor
· VDRM = 4500 V
· ITGQM = 6500 A
· ITSM = 40.4·103 A
· VT0 = 1.12 V
· rT = 0.294 mΩ
· VDC = 2800 V
· High snubberless turn-off rating
· Optimized for low on-state losses
· High electromagnetic immunity
· Simple control interface with status feedback
· AC or DC supply voltage
· Option for series connection (contact factory)
