Asymmetric Integrated Gate-Commutated Thyristor
VDRM = 4500 V
ITGQM = 6000 A
ITSM = 38.6·103 A
VT0 = 1.39 V
rT = 0.390 mΩ
VDC = 2800 V
· High snubberless turn-off rating
· Optimized for high switching frequency
· High electromagnetic immunity
· Simple control interface with status feedback
· AC or DC supply voltage
· Option for series connection (contact factory)
